Progress to a Gallium-Arsenide Deep-Center Laser
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چکیده
منابع مشابه
Progress to a Gallium-Arsenide Deep-Center Laser
Although photoluminescence from gallium-arsenide (GaAs) deep-centers was first observed in the 1960s, semiconductor lasers have always utilized conduction-to-valence-band transitions. Here we review recent materials studies leading to the first GaAs deep-center laser. First, we summarize well-known properties: nature of deep-center complexes, Franck-Condon effect, photoluminescence. Second, we ...
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ژورنال
عنوان ژورنال: Materials
سال: 2009
ISSN: 1996-1944
DOI: 10.3390/ma2041599